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SEMICONDUCTOR TECHNICAL DATA
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The RF Line
NPN Silicon RF Power Transistor
Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. * Specified 50 Volt, 30 MHz Characteristics -- Output Power = 150 W (PEP) Minimum Gain = 13 dB Efficiency = 45% * Intermodulation Distortion @ 150 W (PEP) -- IMD = -32 dB (Max) * Diffused Emitter Resistors for Superior Ruggedness * 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR @ 150 W CW
MRF429
150 W (LINEAR), 30 MHz RF POWER TRANSISTOR NPN SILICON
CASE 211-11, STYLE 1
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Withstand Current -- 10 s Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC -- PD Tstg Value 50 100 4.0 16 20 233 1.33 -65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.75 Unit C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO 50 100 100 4.0 -- -- -- -- -- -- -- -- Vdc Vdc Vdc Vdc (continued)
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ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 10 30 80 --
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 50 Vdc, IE = 0, f = 1.0 MHz) Cob -- 220 300 pF
FUNCTIONAL TESTS
Common-Emitter Amplifier Gain (VCC = 50 Vdc, Pout = 150 W (PEP), IC(max) = 3.32 Adc, f = 30; 30.001 MHz) Output Power (VCE = 50 Vdc, f = 30; 30.001 MHz) Collector Efficiency (VCC = 50 Vdc, Pout = 150 W (PEP), IC(max) = 3.32 Adc, f = 30, 30.001 MHz) Intermodulation Distortion (1) (VCE = 50 Vdc, Pout = 150 W (PEP), IC = 3.32 Adc) Electrical Ruggedness (VCC = 50 Vdc, Pout = 150 W CW, f = 30 MHz, VSWR 30:1 at all Phase Angles) GPE 13 15 -- dB
Pout
150 45
-- --
-- --
W (PEP) %
IMD
--
-35
-32
dB
No Degradation in Output Power
NOTE: 1. To Mil-Std-1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
+ BIAS -
R1 + CR1 L2 DUT L3 L4
L5 + C3 C4 C8 C9 C10 50 Vdc RF OUTPUT
RF INPUT
C2
L1 R3
C6 C5 C7
C1
R2
C1, C2, C7 -- 170-780 pF, Arco 469 C3, C8, C9 -- 0.1 F, 100 V Erie C4 -- 500 F @ 6.0 V C5 -- 9.0-180 pF, Arco 463 C6 -- 80-480 pF, Arco 466 C10 -- 30 F, 100 V R1 -- 10 , 10 Watt
R2 -- 10 , 1.0 Watt R3 -- 5.0 - 3.3 1/2 Watt Carbon Resistors in Parallel CR1 -- 1N4997 L1 -- 3 Turns, #16 Wire, 5/16 I.D., 5/16 Long L2 -- 10 H Molded Choke L3 -- 12 Turns, #16 Enameled Wire Closewound, 1/4 I.D. L4 -- 5 Turns, 1/8 Copper Tubing, 9/16 I.D., 3/4 Long L5 -- 10 Ferrite Beads -- Ferroxcube #56-590-65/3B
Figure 1. 30 MHz Test Circuit Schematic
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250 200 150 100 50 0 VCC = 50 V 40 V 28 V Pout , OUTPUT POWER (WATTS PEP) Pout , OUTPUT POWER (WATTS CW) f = 30 MHz ICQ = 150 mA
250 200 150 100 50 0 -35 dB f = 30, 30.001 MHz ICQ = 150 mA IMD = d3
IMD = -30 dB
0
2
4 6 Pin, INPUT POWER (WATTS)
8
10
20
30
40 50 VCC, SUPPLY VOLTAGE (VOLTS)
60
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
30 25 20 15 10 0 Pout , (WATTS CW)
350 300 250 200 150 100 100C 1 3 5 10 30 50 OUTPUT VSWR f = 30.000 MHz ICQ = 150 mA VCC = 50 V
G PE , POWER GAIN (dB)
VCC = 50 V ICQ = 150 mA Pout = 150 W
TC = 50C
1
2
4
7 15 f, FREQUENCY (MHz)
30
60
100
Figure 4. Power Gain versus Frequency
Figure 5. RF Safe Operating Area (SOAR)
VCC = 30 V
200 150 100 50 0 15 V
IMD, INTERMODULATION DISTORTION (dB)
250
-25 -30 -35 -40 -45 -50 d5 d3 VCC = 50 V f = 30, 30.001 MHz
f T (MHz)
0
10 5 IC, COLLECTOR CURRENT (AMPS)
14
0
20
40 60 80 100 120 Pout, OUTPUT POWER (WATTS PEP)
140
160
Figure 6. fT versus Collector Current
Figure 7. IMD versus Pout
3
5000 Cout , PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF) Rout , PARALLEL EQUIVALENT OUTPUT RESISTANCE (OHMS) 4000 3000 2000 1000 0 VCC = 50 V ICQ = 150 mA Pout = 150 W PEP
20 16 12 8 4 0 VCC = 50 V ICQ = 150 mA Pout = 150 W PEP
1
2
4
7 15 f, FREQUENCY (MHz)
30
60
100
1
2
4
7 15 f, FREQUENCY (MHz)
30
60
100
Figure 8. Output Capacitance versus Frequency
Figure 9. Output Resistance versus Frequency
90 60 30 15 VCC = 50 V ICQ = 150 mA Pout = 150 W PEP f MHz 2.0 4.0 7.0 15 30 60 90 Zin Ohms 7.15 - j2.40 4.20 - j2.25 2.55 - j1.75 1.60 - j1.15 1.10 - j0.70 0.78 - j0.30 0.67 - j0.10
7.0
4.0
f = 2.0 MHz Zo = 10
Figure 10. Series Equivalent Impedance
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PACKAGE DIMENSIONS
A U M
1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
Q
M
4
R
B
2
3
D K J H C E
SEATING PLANE
DIM A B C D E H J K M Q R U STYLE 1: PIN 1. 2. 3. 4.
INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 --45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730
MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 --45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54
EMITTER BASE EMITTER COLLECTOR
CASE 211-11 ISSUE N
Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
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